BJT Characteristics — NPN Common Emitter

Real-time I-V characteristics using the Shockley model with Early Effect & saturation. Toggle between input (I_B vs V_BE) and output (I_C vs V_CE) curves.

Characteristic Type

Input: I_B vs V_BE — V_CE as parameter

BJT Parameters

β (hFE) — DC Gain 100

20 500

V_A — Early Voltage 100V

20V 300V

Output Char. Settings

Max I_B 100µA

20µA 200µA

Max V_CE 15V

5V 25V

Input Char. Settings

Curves drawn for fixed V_CE values:
0V 2V 5V 10V

Sweep V_BE to 0.82V

0.5V 0.9V

Live Readings

V_BE (cursor) — V

I_B (cursor) — µA

β (hFE) 100

V_A (Early) 100 V

V_BE(on) ≈ 0.65–0.70 V

Region Guide

Saturation: V_CE < 0.2V, both junctions forward biased

Active: I_C ≈ β·I_B, slight slope from Early Effect

Cutoff: I_B = 0, I_C ≈ I_CEO only

Input Characteristics — I_B vs V_BE

Curves for different V_CE values (parameter)

ACTIVE PHYSICS MODEL


I_C = I_S·exp(V_BE/V_T)·(1 + V_CE/V_A)   |   I_B = I_C / β


V_T = 25.85 mV  |  I_S = 1×10⁻¹⁴ A  |  Early Voltage V_A adjustable

Circuit Diagram — Common Emitter Configuration